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| Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR KSH13007F HIGH VOLTAGE SWITCH MODE APPLICICATION High Speed Switching Suitable for Switching Regulator and Montor Control ABSOLUTE MAXIMUM RATINGS a=25ae(c) T T stg Storage Temperature---------- 65~150ae T j Junction Temperature-----------150ae PCCollector Dissipation c=25ae T (c)-------40W VCBO Collector-Base Voltage----------700V VCEOCollector-Emitter Voltage---------400V VEBO Emitter-Base Voltage-----------9V ICCollector Current DC------------ (c) 8A ICP Collector Current Pulse(c)------- 16A ---- TO-220F 1D Base B 2D Collector C 3D Emitter, E IB Current----------------Base 4A cIEy=25ae Ta (c) Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO IEBO HFE Collector-Emitter Sustaining Voltage Emitter-Base Cut-off Current DC Current Gain 400 1 10 5 40 30 1 2 3 V mA IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=2A VCE=5V, IC=5A VCE(sat) Collector- Emitter Saturation Voltage V V V V V pF MHz IC=2A, IB =0.4A IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A, IB =1A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=5A, IB1 =-IB2 =1A RL=50| VBE(sat) Base- Emitter Saturation Voltage 1.2 1.6 Cob fT tON tS tF Output Capacitance Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time 4 110 1.6 3 0.7 |I s |I s |I s hFE Classification H1 10--16(c) H2 14--21(c) H3 19--26(c) H4 24--31(c) H5 29--40(c) Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR KSH13007F Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR KSH13007F |
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